resistances are inversed between P and AP state !#1
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salah-daddi-nounou wants to merge 1 commit intoARM-software:mainfrom
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resistances are inversed between P and AP state !#1salah-daddi-nounou wants to merge 1 commit intoARM-software:mainfrom
salah-daddi-nounou wants to merge 1 commit intoARM-software:mainfrom
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*** The resistance should be high at anti-parallel (AP) state and low at parallel state (P) *** - The pinned layer magnetization vector is initialized UP ( p_theta_pl = 0 and pl_z = 1) - The parallel state requires the magnetization vector of the free layer to be UP also (m_theta= 0 and m_z = 1) The formula R = f(mz) should be corrected as follows in order to get low resistance when V(mz) = 1 : // simple TMR based conduction r_mtj_module (fl pl) bsource r=p_r_p*(1 + p_tmr/(p_tmr + 2))/(1 + p_tmr/(p_tmr + 2)*V(mz))
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the formula from https://doi.org/10.1109/TMAG.2017.2788010 was adopted whereas the MTJ pinned layer configuration is different. |
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*** The resistance should be high at anti-parallel (AP) state and low at parallel state (P) ***
r_mtj_module (fl pl) bsource r=p_r_p*(1 + p_tmr/(p_tmr + 2))/(1 + p_tmr/(p_tmr + 2)*V(mz))